Electronics Letters · 1997 · 45 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesDevice CharacterizationHigh-frequency Semiconductor DevicesMicrowave Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsConductionConduction BandCutoff FrequencyFermi LevelHigh-temperature Device OperationHigh-temperature ElectronicsMicrowave DevicesMicrowave Transistors
The authors report the DC and microwave performance of a 0.25 µm gate doped channel Al0.14Ga0.86N/GaN HFETs exhibiting a cutoff frequency of 37.5 GHz and a maximum frequency of oscillations of 80.4 GHz. The calculations of the Fermi level position and comparison with the expected conduction band discontinuity confirm that the channel in these transistors is doped. DC and microwave characteristics of these devices do not change much with temperature up to at least 200 and 90°C, respectively.
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Measured microwave power performance of AlGaN/GaN MODFET
Yifeng Wu, B.P. Keller, S. Keller et al. · IEEE Electron Device Letters · 1996 · 151 citations