Applied Physics Letters · 1994 · 16 citations · 5 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor MaterialsDielectricsMemory DevicesMos CapacitorsSemiconductor ReliabilitySemiconductor Thin FilmsSilicon MaterialsDielectric PermittivityDielectric-semiconductor InterfacesOxide DielectricsSiliconSilicon-on-insulator TechnologyStress-induced Leakage CurrentThickness Control
A new process technique, referred to as the ‘‘oxidized-nitrided silicon (ONS),’’ was developed for producing ultrathin (≤50 Å) dielectrics. Metal-oxide-semiconductor capacitors were fabricated using this novel process to investigate the dielectric quality. It was found that devices with ONS dielectrics exhibit reduced charge trapping and improved interface-state generation characteristics. The stress-induced leakage current, which is one of the major concerns for ultrathin dielectrics, was also suppressed by employing the ONS dielectrics. In addition, precise thickness control can be easily achieved by the ONS process even down to the ultrathin regime. The results suggest that this novel ONS process can synthesize reliable tunnel dielectrics suitable for memory applications.
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