Journal of Vacuum Science and Technology · 1979 · 30 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceInterface ScienceSemiconductor MaterialsThin FilmsSemiconductor InterfacesSemiconductor SurfacesSilicon MaterialsSurface OxidationSurface PhysicsThin Film Electrical PropertiesAnnealing EffectsAnnealing Temperature EffectsAnnealing Time EffectsElectrical PropertiesSilicon DioxideSilicon InterfacesSurface Oxidation StatesSurface States
The electrical properties of thin thermal SiO2 films were studied as a function of high-temperature, postoxidation annealing in various ambients. Surface charge measurements were made of SiO2–Si structures after annealing for different time intervals in a N2 ambient at temperatures ?925°C. The oxidation-induced fixed oxide charge rapidly decreased. A more gradually increasing charge was observed that is primarily attributed to fast surface states.