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Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx:H/InP and Al/SiNx:H/In0.53Ga0.47As structures by DLTS and conductance transient techniques

Helena Castán, S. Dueñas, J. Barbolla, E. Redondo, Noelia Blanco, I. Mártil, G. González-Dı́az

Microelectronics Reliability · 2000 · 27 citations · 8 references

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8

A self-consistent computer simulation of compound semiconductor metal-insulator-semiconductor <i>C</i>-<i>V</i> curves based on the disorder-induced gap-state model

He Li, Hideki Hasegawa, T. Sawada et al. · Journal of Applied Physics · 1988 · 68 citations

, , +17

Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films

W. S. Lau, Stephen J. Fonash, Jerzy Kanicki · Journal of Applied Physics · 1989 · 60 citations

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Low temperature deposition of silicon nitride films by distributed electron cyclotron resonance plasma-enhanced chemical vapor deposition

Stephane Sitbon, M. C. Hugon, B. Agius et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1995 · 52 citations

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Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

S. Dueñas, Ramón J. Peláez, R. Pinacho et al. · Applied Physics Letters · 1997 · 44 citations · Full text

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Electrical properties of the SiN<i>x</i>/InP interface passivated using H2S

V. Malhotra · Applied Physics Letters · 1993 · 30 citations

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