I. Mártil

Optical properties and structure of HfO₂thin films grown by high pressure reactive sputtering

F. L. Martı́nez, M. Toledano-Luque, J.J. Gandı́a et al. · Journal of Physics D Applied Physics · 2007 · 184 citations · Full text

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

E. Antolín, J. Olea, David Pastor et al. · Applied Physics Letters · 2009 · 130 citations · Full text

Wide-bandgap Semiconductor, Engineering, Ultrahighly Titanium-doped Silicon +19

Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

E. San Andrés, A. del Prado, F. L. Martı́nez et al. · Journal of Applied Physics · 2000 · 109 citations · Full text

Engineering, Ftir Characterization, Electron Cyclotron Resonance +16

Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1–1.8eV)

E. Márquez, A.M. Bernal-Oliva, J.M. González-Leal et al. · Materials Chemistry and Physics · 1999 · 87 citations · Full text

Materials Science, Optical Materials, Engineering +9

A comparative study of the electrical properties of TiO₂films grown by high-pressure reactive sputtering and atomic layer deposition

S. Dueñas, Helena Castán, H. García et al. · Semiconductor Science and Technology · 2005 · 83 citations · Full text