J. Olea

Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material

E. Antolín, J. Olea, David Pastor et al. · Applied Physics Letters · 2009 · 130 citations · Full text

Wide-bandgap Semiconductor, Engineering, Ultrahighly Titanium-doped Silicon +19

Titanium doped silicon layers with very high concentration

J. Olea, M. Toledano-Luque, David Pastor et al. · Journal of Applied Physics · 2008 · 75 citations · Full text

Engineering, Intermediate Band, Optoelectronic Devices +16

Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

R. García-Hernansanz, E. García-Hemme, D. Montero et al. · Solar Energy Materials and Solar Cells · 2018 · 59 citations · Full text

Electrical Engineering, Hole Transport Layer, Engineering +7

Sub-bandgap absorption in Ti implanted Si over the Mott limit

J. Olea, A. del Prado, David Pastor et al. · Journal of Applied Physics · 2011 · 58 citations · Full text

Optical Materials, Engineering, Laser Applications +21

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

E. García-Hemme, R. García-Hernansanz, J. Olea et al. · Applied Physics Letters · 2014 · 57 citations · Full text

Optical Materials, Engineering, Optoelectronic Devices +18