R. García-Hernansanz

Author

Also Known As

Javier Olea, R Garcia-Hernansanz, R García-Hernansanz, R. Garcia-Hernansanz, R. García-Hernansanz, R. García-Hernansanz, Rodrigo Garcia-Hernansanz, Rodrigo García-Hernansanz, Rodrigo García‐Hernansanz

Publications

494

Citations

H-Index

Concepts

All Affiliations

Universidad Complutense de Madrid Universidad San Pablo CEU Universidad Politécnica de Madrid Universidad de Valladolid

About

R. García-Hernansanz is an author at Universidad Complutense de Madrid specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	14	369
2	Applied Physics	11	13	352
3	Electrical Engineering	9	9	231
4	Natural Sciences	2	2	59
5	Materials Engineering	2	2	31

R. García-Hernansanz

Publications

408

Citations

H-Index

Page 1

	Year	Citations
Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer R. García-Hernansanz, E. García-Hemme, D. Montero, Solar Energy Materials and Solar Cells Electrical EngineeringHole Transport LayerEngineeringApplied PhysicsSemiconductor Material	2018	59
Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector E. García-Hemme, R. García-Hernansanz, J. Olea, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	2014	57
Sub-bandgap spectral photo-response analysis of Ti supersaturated Si E. García-Hemme, R. García-Hernansanz, J. Olea, Applied Physics Letters Optical MaterialsEngineeringIntegrated CircuitsSilicon On InsulatorSemiconductors	2012	42
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon E. García-Hemme, R. García-Hernansanz, J. Olea, Applied Physics Letters EngineeringInsulator-metal Transition TheorySilicon On InsulatorIi-vi SemiconductorInsulator-metal Transition Limit	2013	41
Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon David Pastor, J. Olea, A. del Prado, Solar Energy Materials and Solar Cells Materials ScienceIntermediate Band FormationElectrical EngineeringEngineeringApplied Physics	2012	35
Low temperature intermediate band metallic behavior in Ti implanted Si J. Olea, David Pastor, E. García-Hemme, Thin Solid Films Materials ScienceMaterials EngineeringIon ImplantationEngineeringApplied Physics	2012	21
On the Optoelectronic Mechanisms Ruling Ti‐hyperdoped Si Photodiodes E. García-Hemme, D. Caudevilla, S. Algaidy, Advanced Electronic Materials Optical MaterialsEngineeringSemiconductor MaterialsOptoelectronic DevicesIntegrated Circuits	2021	19
Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications E. Pérez, Helena Castán, H. García, Applied Physics Letters EngineeringEnergy EfficiencyEnergy Levels DistributionIntermediate BandPhotovoltaic System	2015	17
Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si J. Olea, David Pastor, A. del Prado, Journal of Applied Physics Materials ScienceIi-vi SemiconductorSuperconducting MaterialNew MaterialEngineering	2013	17
Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap J. Olea, Esther López, E. Antolín, Journal of Physics D Applied Physics	2016	17

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