E. García-Hemme - Concepedia

Author

E. García-Hemme

Also Known As

E Garcia-Hemme, E García-Hemme, E. Garcia-Hemme, E. García-Hemme, E. García-Hemme, Eric Garcia-Hemme, Eric García-Hemme, Eric García Hemme, Eric García-Hemme, Eric García‐Hemme

Publications

923

Citations

H-Index

Concepts

All Affiliations

Universidad Complutense de Madrid Universidad San Pablo CEU Universidad Politécnica de Madrid Universidad de Valladolid Helmholtz-Zentrum Dresden-Rossendorf

About

E. García-Hemme is an author at Universidad Complutense de Madrid specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	13	19	512
2	Applied Physics	13	18	495
3	Electrical Engineering	10	12	351
4	Natural Sciences	2	2	59
5	Chemistry	2	2	23

E. García-Hemme

Publications

837

Citations

H-Index

Page 1

	Year	Citations
Development of a Selective Chemical Etch To Improve the Conversion Efficiency of Zn-Rich Cu<sub>2</sub>ZnSnS<sub>4</sub>Solar Cells Andrew Fairbrother, E. García-Hemme, Víctor Izquierdo‐Roca, Journal of the American Chemical Society	2012	252
Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer R. García-Hernansanz, E. García-Hemme, D. Montero, Solar Energy Materials and Solar Cells Electrical EngineeringHole Transport LayerEngineeringApplied PhysicsSemiconductor Material	2018	59
Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector E. García-Hemme, R. García-Hernansanz, J. Olea, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	2014	57
Silicon‐Based Intermediate‐Band Infrared Photodetector Realized by Te Hyperdoping Mao Wang, E. García-Hemme, Yonder Berencén, Advanced Optical Materials Photonic SensorOptical MaterialsEngineeringTe HyperdopingOptoelectronic Devices	2020	45
Sub-bandgap spectral photo-response analysis of Ti supersaturated Si E. García-Hemme, R. García-Hernansanz, J. Olea, Applied Physics Letters Optical MaterialsEngineeringIntegrated CircuitsSilicon On InsulatorSemiconductors	2012	42
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon E. García-Hemme, R. García-Hernansanz, J. Olea, Applied Physics Letters EngineeringInsulator-metal Transition TheorySilicon On InsulatorIi-vi SemiconductorInsulator-metal Transition Limit	2013	41
Experimental verification of intermediate band formation on titanium-implanted silicon Helena Castán, E. Pérez, H. García, Journal of Applied Physics Materials ScienceIntermediate Band FormationElectrical EngineeringTitanium ImplantationEngineering	2013	38
Hyperdoped silicon materials: from basic materials properties to sub-bandgap infrared photodetectors Meng‐Ju Sher, E. García-Hemme Semiconductor Science and Technology EngineeringHyperdoped Silicon MaterialsOptoelectronic DevicesSilicon On InsulatorSub-bandgap Infrared Photodetectors	2023	37
Insulator to metallic transition due to intermediate band formation in Ti-implanted silicon David Pastor, J. Olea, A. del Prado, Solar Energy Materials and Solar Cells Materials ScienceIntermediate Band FormationElectrical EngineeringEngineeringApplied Physics	2012	35
Low temperature intermediate band metallic behavior in Ti implanted Si J. Olea, David Pastor, E. García-Hemme, Thin Solid Films Materials ScienceMaterials EngineeringIon ImplantationEngineeringApplied Physics	2012	21

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