Silicides as contact material for DRAM applications

NiSi salicide technology for scaled CMOS

Hiroshi Iwai, T. Ohguro, Shun-ichiro Ohmi · Microelectronic Engineering · 2002 · 308 citations

Engineering, Mechatronics Engineering, Semiconductor Devices +7

Formation and stability of silicides on polycrystalline silicon

E. G. Colgan, J. Gambino, Q. Z. Hong · Materials Science and Engineering R Reports · 1996 · 201 citations

Engineering, Materials Engineering, Materials Science +12

Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films

T. Ohguro, S. Nakamura, M. Koike et al. · IEEE Transactions on Electron Devices · 1994 · 151 citations

Engineering, Electrical Engineering, Materials Science +10

Stability of As and B doped Si with respect to overlaying CoSi₂ and TiSi₂ thin films

Karen Maex, Gautam Ghosh, L. Delaey et al. · Journal of materials research/Pratt's guide to venture capital sources · 1989 · 70 citations

Natural Sciences, Materials Science, Physics +10

The Influence of Capping Layer Type on Cobalt Salicide Formation in Films and Narrow Lines

Paul R. Besser, A. Lauwers, N. Roelandts et al. · MRS Proceedings · 1998 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +11