M. Goldbach

From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices

Stefan Mueller, Johannes Müller, Raik Hoffmann et al. · IEEE Transactions on Electron Devices · 2013 · 142 citations

Engineering, Electrical Engineering, Materials Science +14

Silicides as contact material for DRAM applications

C. Fitz, M. Goldbach, Anne‐Laurence Dupont et al. · Microelectronic Engineering · 2005 · 25 citations

Engineering, Materials Engineering, Materials Science +12

Integration of capacitor for sub-100-nm DRAM trench technology

J. Lützen, A. Birner, M. Goldbach et al. · 2003 · 19 citations

Engineering, Electrical Engineering, Materials Science +17

Electrical properties of self-assembled carbon networks

L. V. Govor, M. Goldbach, I. Bashmakov et al. · Physical review. B, Condensed matter · 2000 · 17 citations

Natural Sciences, Materials Engineering, Materials Science +16