Pi-gate tunneling field-effect transistor charge trapping nonvolatile memory based on all tunneling transportation

Abstract

This work demonstrates the feasibility of a charge-trapping nonvolatile memory based on Pi-gate polycrystalline silicon tunneling field-effect transistor, which has a silicon-oxide-nitride-oxide-silicon structure. Both the conducting current and the program/erase operations are based on quantum tunneling. In addition to a large threshold voltage shift of 4.7 V when Vg of 17 V is applied for only 1 ms, the proposed nonvolatile memory exhibits superior endurance of 88% after 104 P/E cycles. Moreover, only 35% of its initial charges are lost after ten years at a high temperature of 85 °C.