Yi‐Ruei Jhan - Concepedia

Author

Yi‐Ruei Jhan

National Tsing Hua University

Also Known As

Y.R. Jhan, Y.–R. Jhan, Yi-Ruei Jhan, Yi‐Ruei Jhan

Publications

675

Citations

H-Index

Concepts

All Affiliations

National Tsing Hua University Academia Sinica National Yang Ming Chiao Tung University

About

Yi‐Ruei Jhan is an author at National Tsing Hua University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	17	562
2	Electrical Engineering	13	14	496
3	Applied Physics	12	13	380
4	Computer Engineering	3	3	59
5	Chemical Engineering	2	2	51

Yi‐Ruei Jhan

Publications

562

Citations

H-Index

Page 1

	Year	Citations
Electrochemical performance and low discharge cut-off voltage behavior of ruthenium doped Li4Ti5O12 with improved energy density Yi‐Ruei Jhan, Jenq‐Gong Duh Electrochimica Acta Materials ScienceElectrical EngineeringEngineeringElectrochemical Power SourceImproved Energy Density	2011	86
Performance of Inversion, Accumulation, and Junctionless Mode n-Type and p-Type Bulk Silicon FinFETs With 3-nm Gate Length V. Thirunavukkarasu, Yi‐Ruei Jhan, Yanbo Liu, IEEE Electron Device Letters Device ModelingElectrical EngineeringBulk FinfetEngineeringChannel Doping	2015	68
Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm) Yi‐Ruei Jhan, V. Thirunavukkarasu, Cheng‐Ping Wang, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringElectronic DevicesJunctionless Field-effect Transistor	2015	48
Improved capacity and rate capability of Ru-doped and carbon-coated Li4Ti5O12 anode material Chih‐Yuan Lin, Yi‐Ruei Jhan, Jenq‐Gong Duh Journal of Alloys and Compounds Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringMetal Anode	2011	45
Characteristic of p-Type Junctionless Gate-All-Around Nanowire Transistor and Sensitivity Analysis Ming-Hung Han, Chun‐Yen Chang, Yi‐Ruei Jhan, IEEE Electron Device Letters EngineeringSemiconductor MaterialsSemiconductor DeviceSemiconductorsNanowire Transistors	2013	44
Preparation and characterization of Ruthenium doped Li4Ti5O12 anode material for the enhancement of rate capability and cyclic stability Yi‐Ruei Jhan, Chih‐Yuan Lin, Jenq‐Gong Duh Materials Letters Materials ScienceMaterials EngineeringChemical EngineeringEngineeringLi4ti5o12 Anode Material	2011	38
Performance Enhancement of Nanowire Tunnel Field-Effect Transistor With Asymmetry-Gate Based on Different Screening Length Yi‐Ruei Jhan, Yung‐Chun Wu, Min-Feng Hung IEEE Electron Device Letters EngineeringNanocomputingSemiconductor DeviceSemiconductorsElectronic Devices	2013	32
Characterizing the Electrical Properties of a Novel Junctionless Poly-Si Ultrathin-Body Field-Effect Transistor Using a Trench Structure Mu-Shih Yeh, Yung‐Chun Wu, Min-Hsin Wu, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringQuantum Confinement EffectEngineering	2014	28
Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec) V. Thirunavukkarasu, Yi‐Ruei Jhan, Yanbo Liu, Applied Physics Letters EngineeringChannel ThicknessRecord Sub-threshold SlopeIntegrated CircuitsSilicon On Insulator	2017	28
High Performance of Fin-Shaped Tunnel Field-Effect Transistor SONOS Nonvolatile Memory With All Programming Mechanisms in Single Device Yi‐Ruei Jhan, Yung‐Chun Wu, Hsin-Yi Lin, IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureSingle Device	2014	25

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