V. Thirunavukkarasu

Performance of Inversion, Accumulation, and Junctionless Mode n-Type and p-Type Bulk Silicon FinFETs With 3-nm Gate Length

V. Thirunavukkarasu, Yi‐Ruei Jhan, Yanbo Liu et al. · IEEE Electron Device Letters · 2015 · 68 citations

Engineering, Electrical Engineering, Microelectronics +16

Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

Yi‐Ruei Jhan, V. Thirunavukkarasu, Cheng‐Ping Wang et al. · IEEE Electron Device Letters · 2015 · 49 citations

Engineering, Electrical Engineering, Materials Science +13

Analysis of Ge-Si Heterojunction Nanowire Tunnel FET: Impact of Tunneling Window of Band-to-Band Tunneling Model

Erry Dwi Kurniawan, V. Thirunavukkarasu, Yung‐Chun Wu · Journal of The Electrochemical Society · 2017 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform

Salim Berrada, Hamilton Carrillo-Nuñez, Jaehyun Lee et al. · Journal of Computational Electronics · 2020 · 36 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +17

Theory and practice of total quality function deployment

S.R. Devadasan, N. Kathiravan, V. Thirunavukkarasu · The TQM Journal · 2006 · 28 citations

Engineering, Industrial Engineering, Quality Management +5