Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

Abstract

Silicon (Si) and Germanium (Ge) ultrathin body junctionless field-effect transistor (UTB-JLFET) with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = 1 nm and L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> = 3 nm were demonstrated by solving the coupled drift-diffusion and density-gradient model. The simulation results show that the Si and Ge channel can be used in ultrashort channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule of T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eh</sub> = L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> /3. Furthermore, Ge UTB-JLFET 6T-SRAM cell has reasonable static noise margin value of 149 mV. The circuit performances reveal that UTB-JLFET can be used for sub-5-nm CMOS technology nodes.