Erry Dwi Kurniawan

Analysis of Ge-Si Heterojunction Nanowire Tunnel FET: Impact of Tunneling Window of Band-to-Band Tunneling Model

Erry Dwi Kurniawan, V. Thirunavukkarasu, Yung‐Chun Wu · Journal of The Electrochemical Society · 2017 · 38 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Gate-all-around junctionless silicon transistors with atomically thin nanosheet channel (0.65 nm) and record sub-threshold slope (43 mV/dec)

V. Thirunavukkarasu, Yi‐Ruei Jhan, Yanbo Liu et al. · Applied Physics Letters · 2017 · 28 citations

Engineering, Electrical Engineering, Materials Science +17

Performance of Stacked Nanosheets Gate-All-Around and Multi-Gate Thin-Film-Transistors

Yu-Ru Lin, Yi-Yun Yang, Yu-Husien Lin et al. · IEEE Journal of the Electron Devices Society · 2018 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +13

Effect of fin shape of tapered FinFETs on the device performance in 5-nm node CMOS technology

Erry Dwi Kurniawan, Hao Yang, Chia-Chou Lin et al. · Microelectronics Reliability · 2017 · 25 citations

Engineering, Computer Engineering, Electrical Engineering +17

Hybrid P-Channel/N-Substrate Poly-Si Nanosheet Junctionless Field-Effect Transistors With Trench and Gate-All-Around Structure

Yu-Ru Lin, Che-Hsiang Cheng, Yi‐Ruei Jhan et al. · IEEE Transactions on Nanotechnology · 2018 · 12 citations

Engineering, Electrical Engineering, Materials Science +12