Effect of atmospheric pressure MOCVD growth conditionsonUV band-edge photoluminescence in GaN thin films

Abstract

Strong band-edge luminescence in GaN films grown by atmospheric pressure MOCVD is observed. The effect of the growth temperature and V/III ratio on the band-edge to deep level luminescence ratio (Ib/Id) indicates that a large supply of active nitrogen is essential for obtaining excellent optical properties. GaN grown under optimised conditions exhibits an Ib/Id ratio of 10.9 at 300 K and 1300 at 22 K.