Munehiro Kato

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Youichiro Ohuchi et al. · Japanese Journal of Applied Physics · 2001 · 376 citations

Engineering, Electrical Engineering, Materials Science +17

High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

Kazuyuki Tadatomo, Hiroaki Okagawa, Y. Ohuchi et al. · physica status solidi (a) · 2001 · 86 citations

Engineering, Electrical Engineering, Materials Science +17

Photoluminescence of excitons bound at Te isoelectronic traps in ZnSe

T. Yao, Munehiro Kato, J.J. Davies et al. · Journal of Crystal Growth · 1988 · 84 citations

Engineering, Materials Science, Optoelectronics +8

Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%

Patrick Waltereit, H. Sato, C. Poblenz et al. · Applied Physics Letters · 2004 · 43 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of atmospheric pressure MOCVD growth conditionsonUV band-edge photoluminescence in GaN thin films

B.P. Keller, S. Keller, D. Kapolnek et al. · Electronics Letters · 1995 · 26 citations

Engineering, Materials Engineering, Materials Science +17