Technical Physics Letters · 2002 · 23 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsSemiconductor ReliabilityFast Recovery DiodesSilicon CarbideSilicon Carbide Power Devices
The possibility of a superfast (<1 ns) termination of the reverse current during the recovery of a 4H-SiC diode with a p + p 0 n + structure is experimentally demonstrated for the first time. It is shown that the gate recovery process is much like that taking place in inverse-recovery silicon diodes.
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1800 V NPN bipolar junction transistors in 4H-SiC
Sei‐Hyung Ryu, Anant Agarwal, Ranbir Singh et al. · IEEE Electron Device Letters · 2001 · 161 citations
Power drift step recovery diodes (DSRD)
I. V. Grekhov, V.M. Efanov, A.F. Kardo-Sysoev et al. · Solid-State Electronics · 1985 · 123 citations
A 4.5 kV 6H silicon carbide rectifier
Olof Kordina, J. P. Bergman, Anne Henry et al. · Applied Physics Letters · 1995 · 117 citations