T. P. Samsonova

Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

I. V. Grekhov, Pavel A. Ivanov, D. V. Khristyuk et al. · Solid-State Electronics · 2003 · 30 citations

Engineering, Electrical Engineering, Materials Science +13

On the possibility of creating a superfast-recovery silicon carbide diode

I. V. Grekhov, P. A. Ivanov, Andrey O. Konstantinov et al. · Technical Physics Letters · 2002 · 23 citations

Engineering, Electrical Engineering, Materials Science +12

Electric-field dependence of electron drift velocity in 4H–SiC

P. A. Ivanov, T. P. Samsonova, I. V. Grekhov · Solid-State Electronics · 2016 · 19 citations

Natural Sciences, Materials Science, Physics +16

I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

P. A. Ivanov, I. V. Grekhov, O. I. Kon’kov et al. · Semiconductors · 2011 · 16 citations

Engineering, Electrical Engineering, Materials Science +16

Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya et al. · Semiconductors · 2009 · 15 citations

Engineering, Electrical Engineering, Materials Science +12