Concepedia

Sub-nanosecond semiconductor opening switches based on 4H–SiC p+pon+-diodes

I. V. Grekhov, Pavel A. Ivanov, D. V. Khristyuk, Andrey O. Konstantinov, S. V. Korotkov, T. P. Samsonova

Solid-State Electronics · 2003 · 30 citations · 10 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyMetal-semiconductor ContactsNanoelectronicsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSub-nanosecond TimingSwitching Devices

References

10

Performance limiting surface defects in SiC epitaxial p-n junction diodes

Tsunenobu Kimoto, N. Miyamoto, H. Matsunami · IEEE Transactions on Electron Devices · 1999 · 221 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Reverse recovery processes in silicon power rectifiers

H. Benda, Eberhard Spenke · Proceedings of the IEEE · 1967 · 184 citations

Engineering, Electrical Engineering, Materials Science +17

Reverse recovery processes in silicon power rectifiers

H. Benda, Eberhard Spenke · Proceedings of the IEEE · 1967 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

Power drift step recovery diodes (DSRD)

I. V. Grekhov, V.M. Efanov, A.F. Kardo-Sysoev et al. · Solid-State Electronics · 1985 · 123 citations

Engineering, Electrical Engineering, Microelectronics +7

12-19 kV 4H-SiC pin diodes with low power loss

Y. Sugawara, Daisuke Takayama, K. Asano et al. · 2002 · 110 citations

Engineering, Electrical Engineering, Materials Science +13