12-19 kV 4H-SiC pin diodes with low power loss

Abstract

12-19 kV 4H-SiC UHV pin diodes have been developed for the first time. The developed UHV diodes have a low V/sub F/ of less than 1/4/sup th/ and short trr of less than 1/30/sup th/, as compared with those of commercialized 6 kV Si diodes. Therefore, they can drastically reduce both the conduction loss and the switching loss of electric power conversion equipment.