Long wavelength bulk GaInNAs p−i−n photodiodes lattice matched to GaAs

Abstract

We report bulk GaInNAs p−i−n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to ∼1.3 μm. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 1014–1015 cm−3 was obtained in the samples. One of the samples with a 0.5 μm thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 μm at reverse bias of 2 V.