Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

Z. Pan, Lianhe Li, W. Zhang, +2

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +12

Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration

Z. Pan, Lianhe Li, B. Q. Sun, +2

Applied Physics Letters

Wide-bandgap SemiconductorCategoryquantum ElectronicsOptical MaterialsEngineeringOptoelectronic Devices +19

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

Z. Pan, Lianhe Li, W. Zhang, +2

Applied Physics Letters

Chemical KineticsEngineeringCrystal Growth TechnologyMbe GrowthGainnas Growth +15

Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures

Baoquan Sun, Denghui Jiang, Xiao Luo, +4

Applied Physics Letters

Interband Electron TransitionsWide-bandgap SemiconductorElectrical EngineeringPhotoluminescenceEngineering +9

Effects of rapid thermal annealing on the optical properties of GaNxAs1−x/GaAs single quantum well structure grown by molecular beam epitaxy

Lianhe Li, Z. Pan, W. Zhang, +3

Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringOptoelectronic DevicesSemiconductor Nanostructures +16

Photoluminescence properties of a GaN0.015As0.985/GaAs single quantum well under short pulse excitation

Xuan Luo, Z. Y. Xu, Weikun Ge, +2

Applied Physics Letters

PhotonicsPhotoluminescenceGan0.015as0.985/gaas Single QuantumEngineeringPhysics +10

Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction

Z. Pan, Y. T. Wang, Yan Zhuang, +5

Applied Physics Letters

Materials ScienceLayer ThicknessWide-bandgap SemiconductorEpitaxial GrowthEngineering +10

Strain relaxation of GaNxAs1−x on GaAs (001) grown by molecular-beam epitaxy

Z. Pan, Y. T. Wang, Lianhe Li, +2

Journal of Applied Physics

Wide-bandgap SemiconductorCritical ThicknessOptical MaterialsEngineeringSemiconductors +14

Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells

Baoquan Sun, Dayong Jiang, Z. Pan, +2

Applied Physics Letters

Luminescence IntensityGainnas AlloyWide-bandgap SemiconductorOptical MaterialsEngineering +11

Growth and characterization of strained superlattices δ-GaNxAs1−x/GaAs by molecular beam epitaxy

Z. Pan, Lianhe Li, Yue Lin, +4

Journal of Crystal Growth

Materials ScienceSemiconductorsStrained SuperlatticesEngineeringApplied Physics +2