Applied Physics Letters · 2001 · 97 citations · 15 references
EngineeringMaterials SciencePhysicsElectronic MaterialsOptoelectronicsSemiconductor MaterialsElectronic Band StructureOptical Properties Of SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsBand GapBand Gap EnergyConduction BandEffective MassLocalized StatesOptical TransitionsQuantum Well HeterostructuresQuantum Well Structures
We have investigated the optical transitions in Ga1−yInyNxAs1−x/GaAs single and multiple quantum wells using photovoltaic measurements at room temperature. From a theoretical fit to the experimental data, the conduction band offset Qc, electron effective mass me*, and band gap energy Eg were estimated. It was found that the Qc is dependent on the indium concentration, but independent on the nitrogen concentration over the range x=(0–1)%. The me* of GaInNAs is much greater than that of InGaAs with the same concentration of indium, and increases as the nitrogen concentration increases up to 1%. Our experimental results for the me* and Eg of GaInNAs are quantitatively explained by the two-band model based on the strong interaction of the conduction band minimum with the localized N states.
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