J. B. Héroux

Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

Xiaoguang Yang, M. J. Jurkovic, J. B. Héroux et al. · Applied Physics Letters · 1999 · 179 citations

Optical Materials, Engineering, Laser Applications +18

InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy

Xiaoguang Yang, J. B. Héroux, Li Mei et al. · Applied Physics Letters · 2001 · 112 citations

Optical Materials, Engineering, Laser Applications +19

GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm

J. B. Héroux, Xiaohong Yang, W. I. Wang · Applied Physics Letters · 1999 · 99 citations

Photonics, Electrical Engineering, Optical Materials +13

High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

Xiaohong Yang, J. B. Héroux, M. J. Jurkovic et al. · Applied Physics Letters · 2000 · 55 citations

Optical Materials, Engineering, Laser Applications +17

Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells

J. B. Héroux, Xiaoguang Yang, W. I. Wang · Journal of Applied Physics · 2002 · 50 citations

Wide-bandgap Semiconductor, Engineering, Photoreflectance Spectroscopy +16