J. B. Héroux - Concepedia

Author

J. B. Héroux

Also Known As

Heroux, J. B., Heroux, Jean Benoit, J B Heroux, J. B. Heroux, J. B. Héroux, J.B. Heroux, J.B. Héroux, J.B. Héroux, J. B. Héroux, Jean B. Heroux

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

Columbia University The University of Tokyo Coherent (United States)Cornell University United States Naval Research Laboratory

About

J. B. Héroux is an author at Columbia University specializing in applied physics, engineering, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	16	775
2	Applied Physics	15	15	743
3	Natural Sciences	2	2	36
4	Chemical Engineering	1	1	38
5	Computer Engineering	1	1	32

J. B. Héroux

Publications

846

Citations

H-Index

Page 1

	Year	Citations
Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers Xiaoguang Yang, M. J. Jurkovic, J. B. Héroux, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsLaser MaterialHigh-power Lasers	1999	179
InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy Xiaoguang Yang, J. B. Héroux, Li Mei, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsLaser MaterialOptoelectronic Devices	2001	112
GaInNAs resonant-cavity-enhanced photodetector operating at 1.3 μm J. B. Héroux, Xiaohong Yang, W. I. Wang Applied Physics Letters PhotonicsElectrical EngineeringOptical MaterialsEngineeringPhotodetectors	1999	99
High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy Xiaohong Yang, J. B. Héroux, M. J. Jurkovic, Applied Physics Letters Optical MaterialsEngineeringLaser ApplicationsμM IngaasnLaser Material	2000	55
Photoreflectance spectroscopy of strained (In)GaAsN/GaAs multiple quantum wells J. B. Héroux, Xiaoguang Yang, W. I. Wang Journal of Applied Physics Wide-bandgap SemiconductorEngineeringPhotoreflectance SpectroscopyOptoelectronic DevicesNitrogen Fraction	2002	50
Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy Xiaodong Yang, J. B. Héroux, M. J. Jurkovic, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsPhotonicsRoom TemperaturePhotoluminescenceEngineering	1999	42
Nonparabolicity of the conduction band of wurtzite GaN Sheyum Syed, J. B. Héroux, Yueweiying Wang, Applied Physics Letters	2003	40
CO2 laser-assisted removal of submicron particles from solid surfaces J. B. Héroux, S. Boughaba, Isabelle Ressejac, Journal of Applied Physics EngineeringLaser ApplicationsLaser AblationWater VaporVacuum Device	1996	38
Energy-Efficient 1060-nm Optical Link Operating up to 28 Gb/s J. B. Héroux, Tomufumi Kise, M. Funabashi, Journal of Lightwave Technology Free-space Optical NetworkPhotonicsElectrical EngineeringOptical MaterialsEngineering	2015	32
InGaAsSbN: A dilute nitride compound for midinfrared optoelectronic devices W. Li, J. B. Héroux, W. I. Wang Journal of Applied Physics SemiconductorsMaterials ScienceBulk Gasbn LayersElectronic DevicesOptical Materials	2003	32

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