M. J. Jurkovic

Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

Xiaoguang Yang, M. J. Jurkovic, J. B. Héroux et al. · Applied Physics Letters · 1999 · 179 citations

Optical Materials, Engineering, Laser Applications +18

Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy

L. K. Li, M. J. Jurkovic, W. I. Wang et al. · Applied Physics Letters · 2000 · 100 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14

Doping of ZnTe by molecular beam epitaxy

I. W. Tao, M. J. Jurkovic, W. I. Wang · Applied Physics Letters · 1994 · 99 citations

Materials Science, Semiconductors, Materials Engineering +9

High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

Xiaohong Yang, J. B. Héroux, M. J. Jurkovic et al. · Applied Physics Letters · 2000 · 55 citations

Optical Materials, Engineering, Laser Applications +17

Photoluminescence of as-grown and thermally annealed InGaAsN/GaAs quantum wells grown by molecular beam epitaxy

Xiaodong Yang, J. B. Héroux, M. J. Jurkovic et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 42 citations

Semiconductors, Photonics, Room Temperature +15