Doping of ZnTe by molecular beam epitaxy

Abstract

We have grown Cl-doped ZnTe under different growth conditions and N-doped ZnTe on different orientations. n-type doping was achieved for the first time by proper control of the Zn/Te beam flux. A p-type doping level of 1×1020 cm−3, which is the highest reported, was obtained by substrate tilting. These phenomena can be analyzed by the surface bonding structure analogous to the impurity concentration in the III-V compound semiconductors.