InGaAsNSb/GaAs quantum wells for 1.55 μm lasers grown by molecular-beam epitaxy

Abstract

InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam epitaxy using a N2 radio frequency plasma source. The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy studies indicate that Sb suppresses the three-dimensional growth and improves the interface of the QWs. X-ray diffraction and secondary ion mass spectroscopy analysis show that Sb gets incorporated into the quantum well, which becomes a quinternary compound that was previously unexplored. The introduction of Sb during growth of InGaAsN/GaAs QWs significantly enhances the optical properties of the QWs. 1.53 μm room-temperature photoluminescence was obtained from InGaAsNSb/GaAs QWs, which demonstrates the potential of fabricating 1.55 μm InGaAsNSb/GaAs QW lasers for long-haul applications.