Electronics Letters · 1998 · 77 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsContact ResistanceCutoff FrequencyElectron MobilityGallium NitrideGallium Nitride (Gan) MaterialsHigh-electron-mobility TransistorsOhmic ConductionOhmic Contacts
Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1 Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039 Ω.mm, corresponding to a contact resistance of 5.38 × 10–8 Ω.cm2. The fabricated high electron mobility transistors with a 0.25 µm length gate exhibit a cutoff frequency fT of 60 GHz and an fmax of 100 GHz.
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Very low resistance multilayer Ohmic contact to <i>n</i>-GaN
Zhifang Fan, S. Noor Mohammad, Wook Kim et al. · Applied Physics Letters · 1996 · 455 citations
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Yifeng Wu, B.P. Keller, P. Fini et al. · IEEE Electron Device Letters · 1998 · 280 citations