S.J. Cai - Concepedia

Author

S.J. Cai

University of California, Los Angeles ORCID

Also Known As

S. J. Cai, S.J Cai, S.J. Cai, Shaochen Cai, Shujiang Cai

Publications

503

Citations

H-Index

Concepts

All Affiliations

University of California, Los Angeles

About

S.J. Cai is an author at University of California, Los Angeles specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	410
2	Applied Physics	7	7	331
3	Electrical Engineering	7	7	309
4	Materials Engineering	2	2	137
5	Computer Engineering	1	1	38

S.J. Cai

Publications

487

Citations

H-Index

Page 1

	Year	Citations
Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor grown by MBE S.J. Cai, Yi Tang, R. Li, IEEE Transactions on Electron Devices Materials EngineeringSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2000	95
High performance AlGaN/GaN HEMT with improved Ohmiccontacts S.J. Cai, R. Li, Y.L. Chen, Electronics Letters	1998	77
An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz Rongxin Li, S.J. Cai, L. W. Wong, IEEE Electron Device Letters High Al ContentWide-bandgap SemiconductorElectrical EngineeringEngineeringAlgan/gan Hfet	1999	64
Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures L. W. Wong, S.J. Cai, R. Li, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorEngineeringPhysicsApplied Physics	1998	59
Growth of Si whiskers on Au/Si(111) substrate by gas source molecular beam epitaxy (MBE) Jianlin Liu, S.J. Cai, G. L. Jin, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringSi WhiskersNanotechnology	1999	42
High breakdown voltage GaN HFET with field plate J. Li, S.J. Cai, G. Z. Pan, Electronics Letters Electrical EngineeringEngineeringHigh Voltage EngineeringPower Semiconductor DeviceField Plate	2001	41
An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique Sang‐Yun Lee, Bedri A. Cetiner, Hamid Torpi, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorElectronic Engineering	2001	38
Effect of channel doping on the low-frequency noise in GaN/AlGaN heterostructure field-effect transistors Alexander A. Balandin, G. Wijeratne, S.J. Cai, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringApplied Physics	1999	35
Annealing Behavior of a Proton Irradiated Al Ga N/GaN High Electron Mobility Transistor Grown by MBE S.J. Cai, Y. S. Tang, R. Li, Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2000	23
Enhanced-performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates Zhihong Feng, S.J. Cai, Kevin J. Chen, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	2005	13

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