IEEE Transactions on Electron Devices · 2000 · 95 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCarrier TransportDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsGallium NitrideGallium Nitride (Gan) MaterialsHigh-electron-mobility TransistorsIrradiation ConditionsRadiation EffectsRapid Thermal AnnealingThermal AnnealingThermal Annealing Effects
The influence of proton irradiation (1.8 MeV, 1/spl times/10/sup 14/ cm/sup -2/) on the properties of an Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor (HEMT) is studied from current-voltage (I-V) and Raman scattering measurements as a function of rapid thermal annealing (RTA) temperature after irradiation. The I-V curves show that the saturation current (I/sub ds/) and the transconductance (g/sub m/) of the HEMT were seriously reduced by the irradiation. However, the dc characteristics of the HEMT could be mostly recovered by RTA at over 800/spl deg/C.
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