R. Li

Annealing behavior of a proton irradiated Al/sub x/Ga/sub 1-x/N/GaN high electron mobility transistor grown by MBE

S.J. Cai, Yi Tang, R. Li et al. · IEEE Transactions on Electron Devices · 2000 · 95 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +9

Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications

Alexander A. Balandin, Shiwei Cai, R. Li et al. · IEEE Transactions on Microwave Theory and Techniques · 1999 · 91 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

High performance AlGaN/GaN HEMT with improved Ohmiccontacts

S.J. Cai, R. Li, Y.L. Chen et al. · Electronics Letters · 1998 · 77 citations

Magnetotransport study on the two-dimensional electron gas in AlGaN/GaN heterostructures

L. W. Wong, S.J. Cai, R. Li et al. · Applied Physics Letters · 1998 · 59 citations

Semiconductors, Wide-bandgap Semiconductor, Engineering +11

Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors

Alexander A. Balandin, Shiwei Cai, R. Li et al. · IEEE Electron Device Letters · 1998 · 54 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gate Voltage Dependence +11