IEEE Electron Device Letters · 1998 · 54 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationField-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor HeterostructuresWide-bandgap SemiconductorsFlickerFlicker NoiseHeterostructure Field-effect TransistorsNoise CharacteristicsNoise In Field-effect TransistorsNoise In Heterostructure DevicesPower DensitySaturation Region
We have investigated noise characteristics of novel GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias voltages V/sub GS/ and with the drain voltage V/sub DS/ varying from the linear to the saturation regions of operation V/sub DS/>5 V. Our results show that flicker, e.g., 1/f noise, is the dominant limiting noise of these devices; and the Hooge parameter is of the order of 10/sup -5/-10/sup -4/. The gate voltage dependence of 1/f noise was observed in the linear region for all examined V/sub GS/ and in the saturation region for V/sub GS/>0. These results indicating low values of the Hooge parameter are important for microwave applications.
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High-power 10-GHz operation of AlGaN HFET's on insulating SiC
G.J. Sullivan, M.Y. Chen, J.A. Higgins et al. · IEEE Electron Device Letters · 1998 · 122 citations
A theory of the Hooge parameters of solid-state devices
A. van der Ziel, Peter Händel, Xichen Zhu et al. · IEEE Transactions on Electron Devices · 1985 · 82 citations