C.R. Viswanathan - Concepedia

Author

C.R. Viswanathan

Also Known As

C. R. VISWANATHAN, C. R. Viswanathan, C. R. Viswanathan C. R. Viswanathan, C. Viswanathan, C.R Viswanathan, C.R. Viswanathan, Chand R Viswanathan, Chand R. VISWANATHAN, Chand R. Viswanathan, Chand R. Viswanathan Chand R. Viswanathan

152

Publications

Citations

H-Index

Concepts

All Affiliations

University of California, Los Angeles Rockwell Automation (United States)Kodak (United States)Indian Institute of Technology Bombay University of California, Riverside

About

C.R. Viswanathan is an author at University of California, Los Angeles specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	44	1.6K
2	Applied Physics	22	42	1.6K
3	Natural Sciences	3	3	80
4	Chemical Engineering	2	2	45
5	Biochemistry	1	1	28

C.R. Viswanathan

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures Jimmin Chang, A.A. Abidi, C.R. Viswanathan IEEE Transactions on Electron Devices Silicon MosfetElectrical EngineeringEngineeringPhysicsElectronic Engineering	1994	301
Calculation of the Photoelectric Emission from Tungsten, Tantalum, and Molybdenum Irene Petroff, C.R. Viswanathan Physical review. B, Solid state Photoelectric EmissionIi-vi SemiconductorElectrical EngineeringPhotoluminescenceEngineering	1971	153
Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications Alexander A. Balandin, Shiwei Cai, R. Li, IEEE Transactions on Microwave Theory and Techniques Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics	1999	91
Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs Souvik Mahapatra, C.D. Parikh, V. Ramgopal Rao, IEEE Transactions on Electron Devices Device ModelingN-channel Ldd MosfetElectrical EngineeringEngineeringOxide-trapped Charge Distributions	2000	57
Flicker noise in GaN/Al/sub 0.15/Ga/sub 0.85/N doped channel heterostructure field effect transistors Alexander A. Balandin, Shiwei Cai, R. Li, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringGate Voltage DependenceEngineeringRf Semiconductor	1998	54
Characterization of improved InSb interfaces John Langan, C.R. Viswanathan Journal of Vacuum Science and Technology Ltcvd ProcessEngineeringImproved Insb InterfacesChemical DepositionSilicon On Insulator	1979	53
Low-temperature mobility measurements on CMOS devices A. Hairapetian, Daniel Gitlin, C.R. Viswanathan IEEE Transactions on Electron Devices Low-power ElectronicsSemiconductorsElectrical EngineeringElectronic DevicesDevice Modeling	1989	53
Determination of interface-state parameters in a MOS capacitor by DLTS Timothy J. Tredwell, C.R. Viswanathan Solid-State Electronics Device ModelingInterface-state ParametersElectrical EngineeringEngineeringApplied Physics	1980	51
Mobility-field behavior of fully depleted SOI MOSFET's Jia Wang, N. Kistler, J.C.S. Woo, IEEE Electron Device Letters Device ModelingSemiconductor TechnologyElectrical EngineeringExperimental MethodEngineering	1994	49
Model for Thickness Dependence of Radiation Charging in MOS Structures C.R. Viswanathan, J. Maserjian IEEE Transactions on Nuclear Science EngineeringPotential Surface StatesHole TrapsCharge TransportElectromagnetic Compatibility	1976	46

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