The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

Nature of the 2.8 eV photoluminescence band in Mg doped GaN

U. Kaufmann, M. Kunzer, Matthias Maier et al. · Applied Physics Letters · 1998 · 355 citations

Engineering, Materials Engineering, Materials Science +14

Mg-acceptor activation mechanism and transport characteristics in <i>p</i>-type InGaN grown by metalorganic vapor phase epitaxy

Kazuhide Kumakura, Toshiki Makimōto, Naoki Kobayashi · Journal of Applied Physics · 2003 · 135 citations

Engineering, Materials Engineering, Materials Science +17

Enhanced <i>p</i>-type conduction in GaN and AlGaN by Mg-δ-doping

M. L. Nakarmi, K. H. Kim, J. Li et al. · Applied Physics Letters · 2003 · 129 citations

Engineering, Materials Engineering, Materials Science +17

On the flow stability in vertical rotating disc MOCVD reactors under a wide range of process parameters

Bojan Mitrovic, A. Gurary, L. Kadinski · Journal of Crystal Growth · 2005 · 80 citations

Engineering, Chemical Engineering, Physics +13

MOVPE growth and characterization of Mg-doped GaN

P. Kozodoy, S. Keller, Steven P. DenBaars et al. · Journal of Crystal Growth · 1998 · 58 citations

Engineering, Materials Engineering, Materials Science +11