Concepedia
Statistics
Publications
5
Citations
74
H-Index
Active since
2013
Affiliations
Institute of Semiconductors(Current)
Chinese Academy of Sciences
Solid State Physics Laboratory
State Radio Regulation Of China
Binglei Fu is an author at Institute of Semiconductors specializing in materials science, materials engineering, and engineering.
Publications per year
2013–2016
Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides
Zhiqiang Liu, Yang Huang, Xiaoyan Yi et al. · Scientific Reports · 2016 · 21 citations · Full text
Engineering, Materials Engineering, Materials Science +17
Co-doping of magnesium with indium in nitrides: first principle calculation and experiment
Zhiqiang Liu, Binglei Fu, Xiaoyan Yi et al. · RSC Advances · 2016 · 19 citations
Engineering, Materials Engineering, Materials Science +13
Reduction of Efficiency Droop and Modification of Polarization Fields of InGaN-Based Green Light-Emitting Diodes via Mg-Doping in the Barriers
Ning Zhang, Zhe Liu, Zhao Si et al. · Chinese Physics Letters · 2013 · 12 citations
Engineering, Materials Engineering, Materials Science +16
The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN
Binglei Fu, Naixin Liu, Ning Zhang et al. · Journal of Electronic Materials · 2014 · 12 citations
Engineering, Materials Engineering, Materials Science +15
Phosphor-free InGaN micro-pyramid white light emitting diodes with multilayer graphene electrode
Binglei Fu, Yan Cheng, Zhao Si et al. · RSC Advances · 2015 · 10 citations
Engineering, Materials Engineering, Materials Science +14
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