Concepedia

Si/Ge Si1− heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width

S. Lombardo, C. Spinella, S. U. Campisano, A. Pinto, Peter J. Ward

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 11 citations · 11 references

References

11

Theory of a Wide-Gap Emitter for Transistors

H. Kroemer · Proceedings of the IRE · 1957 · 457 citations

Engineering, Electrical Engineering, Microelectronics +13

Heterojunction bipolar transistors using Si-Ge alloys

Subramanian S. Iyer, G.L. Patton, J.M.C. Stork et al. · IEEE Transactions on Electron Devices · 1989 · 397 citations

Engineering, Electrical Engineering, Materials Science +17

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing

C. A. King, Judy L. Hoyt, C. M. Gronet et al. · IEEE Electron Device Letters · 1989 · 171 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of strain on boron diffusion in Si and Si1−<i>x</i>Ge<i>x</i>

P. Kuo, Judy L. Hoyt, J. F. Gibbons et al. · Applied Physics Letters · 1995 · 107 citations

Engineering, Materials Engineering, Materials Science +17

SiGe-HBTs with high <i> f <sub>T</sub> </i> at moderatecurrentdensities

A. Schüppen, A. Gruhle, H. Kibbel et al. · Electronics Letters · 1994 · 77 citations

Engineering, Electrical Engineering, Materials Science +16