A. Pinto

Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

J.A. Babcock, S. Balster, A. Pinto et al. · IEEE Electron Device Letters · 2001 · 179 citations

Engineering, Electrical Engineering, Analog Electronics +12

Si/Ge_xSi/sub 1-x/ heterojunction bipolar transistors with the Ge_xSi/sub 1-x/ base formed by Ge ion implantation in Si

S. Lombardo, A. Pinto, V. Raineri et al. · IEEE Electron Device Letters · 1996 · 21 citations

Engineering, Electrical Engineering, Materials Science +17

Comparative low frequency noise analysis of bipolar and MOS transistors using an advanced complementary BiCMOS technology

J.A. Babcock, B. Loftin, Pankaj M. Madhani et al. · 2002 · 19 citations

Engineering, Electrical Engineering, Microelectronics +16

Si/Ge Si1− heterojunction bipolar transistors formed by Ge ion implantation in Si. Narrowing of band gap and base width

S. Lombardo, C. Spinella, S. U. Campisano et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 11 citations

Engineering, Materials Engineering, Materials Science +17

A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology

Gang Zhang, John D. Cressler, Guofu Niu et al. · Solid-State Electronics · 2000 · 11 citations

Engineering, Computer Engineering, Electrical Engineering +12