J.A. Babcock

Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics

J.A. Babcock, S. Balster, A. Pinto et al. · IEEE Electron Device Letters · 2001 · 179 citations

Engineering, Electrical Engineering, Analog Electronics +12

Dynamic recovery of negative bias temperature instability in <i>p</i>-type metal–oxide–semiconductor field-effect transistors

M. Ershov, Sharad Saxena, H. Karbasi et al. · Applied Physics Letters · 2003 · 161 citations

Engineering, Electrical Engineering, Microelectronics +15

Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD

J.A. Babcock, John D. Cressler, L.S. Vempati et al. · IEEE Transactions on Nuclear Science · 1995 · 87 citations

Engineering, Materials Engineering, Radiation Measurement +13

Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors

L.S. Vempati, John D. Cressler, J.A. Babcock et al. · IEEE Journal of Solid-State Circuits · 1996 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors

John D. Cressler, L.S. Vempati, J.A. Babcock et al. · IEEE Electron Device Letters · 1996 · 46 citations

Engineering, Electrical Engineering, Materials Science +17