Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers

New method for the extraction of MOSFET parameters

G. Ghibaudo · Electronics Letters · 1988 · 822 citations

Numerical Analysis, Device Modeling, Electrical Engineering +9

Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering

Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 735 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +20

Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

Massimo V. Fischetti, Zhibin Ren, P. M. Solomon et al. · Journal of Applied Physics · 2003 · 475 citations

Materials Science, Surface Characterization, Engineering +15

On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation

Shinichi Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 363 citations

Engineering, Surface Orientation, Silicon On Insulator +16

Dependence of thin-oxide films quality on surface microroughness

T. Ohmi, M. Miyashita, M. Itano et al. · IEEE Transactions on Electron Devices · 1992 · 300 citations

Materials Science, Electrical Engineering, Engineering +13