Philippe Gaubert

Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

Akinobu Teramoto, T. Hamada, Masashi Yamamoto et al. · IEEE Transactions on Electron Devices · 2007 · 77 citations

Radical Oxidation, Electrical Engineering, High-performance Cmos +14

1/f noise suppression of pMOSFETs fabricated on Si(100) and Si(110) using an alkali-free cleaning process

Philippe Gaubert, Akinobu Teramoto, T. Hamada et al. · IEEE Transactions on Electron Devices · 2006 · 42 citations

Electrical Engineering, Engineering, Microfabrication +15

Relation Between the Mobility, $\hbox{1}/f$ Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng et al. · IEEE Transactions on Electron Devices · 2010 · 27 citations

Electrical Engineering, Physical Design (Electronics), Engineering +14

Modelling of the hole mobility in p-channel MOS transistors fabricated on (1 1 0) oriented silicon wafers

Philippe Gaubert, Akinobu Teramoto, Tadahiro Ohmi · Solid-State Electronics · 2009 · 20 citations

Device Modeling, Electrical Engineering, Silicon Wafers +9

Different mechanism to explain the 1∕f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 13 citations

Engineering, Low Density, Integrated Circuits +19