Weitao Cheng

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Weitao Cheng, Akinobu Teramoto, Masaki Hirayama et al. · Japanese Journal of Applied Physics · 2006 · 49 citations

Semiconductor Technology, Electrical Engineering, Conventional Fd-soi Pmos +12

Relation Between the Mobility, $\hbox{1}/f$ Noise, and Channel Direction in MOSFETs Fabricated on (100) and (110) Silicon-Oriented Wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng et al. · IEEE Transactions on Electron Devices · 2010 · 27 citations

Electrical Engineering, Physical Design (Electronics), Engineering +14

Different mechanism to explain the 1∕f noise in n- and p-SOI-MOS transistors fabricated on (110) and (100) silicon-oriented wafers

Philippe Gaubert, Akinobu Teramoto, Weitao Cheng et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2009 · 13 citations

Engineering, Low Density, Integrated Circuits +19

Very High Performance CMOS on Si(551) Using Radical Oxidation Technology and Accumulation-Mode SOI Device Structure

Weitao Cheng, Akinobu Teramoto, Tadahiro Ohmi · Journal of The Electrochemical Society · 2010 · 10 citations