Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

Practical surface analysis by auger and X-ray photoelectron spectroscopy

P. Oelhafen · Journal of Electron Spectroscopy and Related Phenomena · 1984 · 2.5K citations

Materials Science, Surface Characterization, Engineering +6

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy

Dongsheng Li, Masatomo Sumiya, Shunro Fuke et al. · Journal of Applied Physics · 2001 · 346 citations

Materials Science, Semiconductors, Selective Etching +14

Cleaning of AlN and GaN surfaces

Sean W. King, J. P. Barnak, M. D. Bremser et al. · Journal of Applied Physics · 1998 · 299 citations

Materials Science, Materials Engineering, Chemical Engineering +13

Effects of surface treatments and metal work functions on electrical properties at <i>p</i>-GaN/metal interfaces

H. Ishikawa, Setsuko Kobayashi, Yasuo Koide et al. · Journal of Applied Physics · 1997 · 220 citations

Materials Science, Semiconductor Technology, Electrical Engineering +13