J. A. Bardwell - Concepedia

Author

J. A. Bardwell

Institute for Microstructural Sciences ORCID

Also Known As

Bardwell, Jennifer, H. S. Isaacs, J A Bardwell, J. A. BARDWELL, J. A. Bardwell, J. Bardwell, J.A Bardwell, J.A. Bardwell, J.A.E. Bardwell, Jennifer A Bardwell

181

Publications

3.1K

Citations

H-Index

Concepts

All Affiliations

Institute for Microstructural Sciences National Research Council Canada Western University Nortel (Canada)University of Toronto

About

J. A. Bardwell is an author at Institute for Microstructural Sciences specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	69	2.5K
2	Applied Physics	24	51	2K
3	Chemistry	20	29	1.2K
4	Chemical Engineering	14	15	423
5	Natural Sciences	8	8	457

J. A. Bardwell

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy M. Kasrai, W. N. Lennard, R.W. Brunner, Applied Surface Science EngineeringPhysicsAtomic Emission SpectroscopyOptical PropertiesSpectroscopy	1996	258
Film thickness measurements of SiO <sub>2</sub> by XPS D. F. Mitchell, K. B. Clark, J. A. Bardwell, Surface and Interface Analysis	1994	160
Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy J. B. Webb, H. Tang, S. Rolfe, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringIntentional DopingThick Gan Layers	1999	153
Properties of carbon-doped GaN H. Tang, J. B. Webb, J. A. Bardwell, Applied Physics Letters Materials ScienceSemiconductorsElectrical EngineeringElectronic DevicesCarbon-doped Gan	2001	148
Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution J. A. Bardwell, J. B. Webb, H. Tang, Journal of Applied Physics Materials ScienceElectrical ContactApplied ChemistryEngineeringPhotochemistry	2001	122
In Situ Characterization of Anodic Silicon Oxide Films by AC Impedance Measurements Patrik Schmuki, H. Böhni, J. A. Bardwell Journal of The Electrochemical Society EngineeringThin Film Process TechnologyVacuum DeviceSilicon On InsulatorChemical Resistance	1995	88
Extensions of the Kramers–Kronig transformation that cover a wide range of practical spectroscopic applications J. A. Bardwell, M. J. Dignam The Journal of Chemical Physics Optical MaterialsEngineeringAbsorption SpectroscopyPractical Spectroscopic ApplicationsOptical Characterization	1985	87
Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors S. P. McAlister, J. A. Bardwell, S. Haffouz, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Wide-bandgap SemiconductorElectrical EngineeringEngineeringGan HfetsVoltage Bias	2006	62
ac Impedance spectroscopy of the anodic film on zirconium in neutral solution J. A. Bardwell, Michael C. H. McKubre Electrochimica Acta Materials ScienceEngineeringNeutral SolutionAnodic FilmApplied Physics	1991	62
Use of 18O/SIMS and Electrochemical Techniques to Study the Reduction and Breakdown of Passive Oxide Films on Iron J. A. Bardwell, B. MacDougall, M. J. Graham Journal of The Electrochemical Society EngineeringOxidation ResistanceChemistryOpen CircuitMineral Processing	1988	62

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