J. A. Bardwell

Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

M. Kasrai, W. N. Lennard, R.W. Brunner et al. · Applied Surface Science · 1996 · 258 citations

Engineering, Physics, Atomic Emission Spectroscopy +12

Film thickness measurements of SiO ₂ by XPS

D. F. Mitchell, K. B. Clark, J. A. Bardwell et al. · Surface and Interface Analysis · 1994 · 160 citations

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

J. B. Webb, H. Tang, S. Rolfe et al. · Applied Physics Letters · 1999 · 153 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Properties of carbon-doped GaN

H. Tang, J. B. Webb, J. A. Bardwell et al. · Applied Physics Letters · 2001 · 148 citations

Materials Science, Semiconductors, Electrical Engineering +14

Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution

J. A. Bardwell, J. B. Webb, H. Tang et al. · Journal of Applied Physics · 2001 · 122 citations

Materials Science, Electrical Contact, Applied Chemistry +13