W. N. Lennard

Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

M. Kasrai, W. N. Lennard, R.W. Brunner et al. · Applied Surface Science · 1996 · 258 citations

Engineering, Physics, Atomic Emission Spectroscopy +12

Film thickness measurements of SiO ₂ by XPS

D. F. Mitchell, K. B. Clark, J. A. Bardwell et al. · Surface and Interface Analysis · 1994 · 160 citations

Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness

M. L. Green, D. Brasen, K. Evans‐Lutterodt et al. · Applied Physics Letters · 1994 · 135 citations

Materials Science, Oxide Heterostructures, Chemical Engineering +13

Generation of atomic oxygen on Ag(111) and Ag(110) using NO2: a TPD, LEED, HREELS, XPS and NRA study

Simon R. Bare, K. Griffiths, W. N. Lennard et al. · Surface Science · 1995 · 134 citations

Materials Science, Inorganic Chemistry, Atomic Oxygen +7

The use of X‐ray absorption spectroscopy for monitoring the thickness of antiwear films from ZDDP

Marina L. Suominen Fuller, Luis Rodríguez Fernández, G.R. Massoumi et al. · Tribology Letters · 2000 · 109 citations