S. Rolfe

Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy

J. B. Webb, H. Tang, S. Rolfe et al. · Applied Physics Letters · 1999 · 153 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

A simple wet etch for GaN

J. A. Bardwell, Ian G. Foulds, J. B. Webb et al. · Journal of Electronic Materials · 1999 · 45 citations

Simple Wet Etch, Engineering, Aluminum Gallium Nitride +2

AlGaN/GaN field effect transistors with C-doped GaN buffer layer as an electrical isolation template grown by molecular beam epitaxy

S. Haffouz, H. Tang, J. A. Bardwell et al. · Solid-State Electronics · 2005 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electrical Isolation Template +6

Characterization of Si1−<i>x</i>Ge<i>x</i> epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

H. Lafontaine, D. C. Houghton, D. Elliot et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 37 citations

Materials Science, Materials Engineering, Semiconductors +14

Characterization of boron-doped silicon epitaxial layers by x-ray diffraction

J.‐M. Baribeau, S. Rolfe · Applied Physics Letters · 1991 · 35 citations

Materials Science, Ion Implantation, Epitaxial Growth +10