H. Lafontaine

Kinetic critical thickness for surface wave instability vs. misfit dislocation formation in GexSi1−x/Si (100) heterostructures

Doug D. Perovic, B. Bahierathan, H. Lafontaine et al. · Physica A Statistical Mechanics and its Applications · 1997 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +14

Scaling and the metal-insulator transition in Si/SiGe quantum wells

J. Lam, M. D’Iorio, Devin K. Brown et al. · Physical review. B, Condensed matter · 1997 · 37 citations · Full text

Engineering, Electrical Engineering, Physics +17

Characterization of Si1−<i>x</i>Ge<i>x</i> epilayers grown using a commercially available ultrahigh vacuum chemical vapor deposition reactor

H. Lafontaine, D. C. Houghton, D. Elliot et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1996 · 37 citations

Engineering, Materials Engineering, Materials Science +15

Transimpedance amplifier-based full low-frequency noise characterization setup for Si/SiGe HBTs

L. Bary, M. Borgarino, R. Plana et al. · IEEE Transactions on Electron Devices · 2001 · 30 citations · Full text

Engineering, Electrical Engineering, Electronic Materials +16

Electronic contribution to secondary electron compositional contrast in the scanning electron microscope

Martin R. Castell, Doug D. Perovic, H. Lafontaine · Ultramicroscopy · 1997 · 28 citations

Natural Sciences, Materials Engineering, Materials Science +11