S. Moisa - Concepedia

Author

S. Moisa

Institute for Microstructural Sciences

Also Known As

Moisa, Simona, S Moisa, S. Moisa, S. Moisa,, Simona Moisa

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Institute for Microstructural Sciences National Research Council Canada University of Manchester Institut National de la Recherche Scientifique Université de Montréal

About

S. Moisa is an author at Institute for Microstructural Sciences specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	23	1.5K
2	Applied Physics	14	18	1.3K
3	Chemistry	6	6	235
4	Chemical Engineering	4	4	761
5	Natural Sciences	1	1	20

S. Moisa

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Direct evaluation of the sp3 content in diamond-like-carbon films by XPS Philippe Mérel, M. Tabbal, Mohamed Chaker, Applied Surface Science Materials ScienceMaterials EngineeringChemical EngineeringSp3 ContentEngineering	1998	677
Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution J. A. Bardwell, J. B. Webb, H. Tang, Journal of Applied Physics Materials ScienceElectrical ContactApplied ChemistryEngineeringPhotochemistry	2001	122
X-ray photoelectron spectroscopy of carbon nitride films deposited by graphite laser ablation in a nitrogen postdischarge M. Tabbal, Philippe Mérel, S. Moisa, Applied Physics Letters EngineeringSurface WaveCubic Boron NitrideVacuum DeviceNitrogen Postdischarge	1996	119
Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO M. Lee, Zheng Lu, Wai Tung Ng, Applied Physics Letters EngineeringHfoxny Gate DielectricsThin Film Process TechnologyVacuum DeviceMolecular Beam Epitaxy	2003	59
Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy F. González‐Posada, J. A. Bardwell, S. Moisa, Applied Surface Science Materials ScienceWide-bandgap SemiconductorAlgan/gan-based Hemt ProcessingAluminium NitrideEngineering	2007	55
XPS and FTIR analysis of nitrogen incorporation in CNx thin films M. Tabbal, Philippe Mérel, S. Moisa, Surface and Coatings Technology Materials ScienceCnx Thin FilmsFtir AnalysisMaterial AnalysisEngineering	1998	51
Using As/P exchange processes to modify InAs/InP quantum dots Philip J. Poole, Robin L. Williams, J. Lefebvre, Journal of Crystal Growth EngineeringQuantum ComputingPhysicsQuantum DeviceApplied Physics	2003	49
InAs/GaAs(100) self-assembled quantum dots: arsenic pressure and capping effects Bruno Riel, Karin Hinzer, S. Moisa, Journal of Crystal Growth SemiconductorsIi-vi SemiconductorEngineeringPhysicsApplied Physics	2002	49
A simple wet etch for GaN J. A. Bardwell, Ian G. Foulds, J. B. Webb, Journal of Electronic Materials Simple Wet EtchEngineeringAluminum Gallium NitrideGan Power DeviceTechnology	1999	45
Corrosion of copper in distilled water without O2 and the detection of produced hydrogen G. Hultquist, M. J. Graham, Oltion Kodra, Corrosion Science Corrosion TechnologyChemical EngineeringCorrosion ProtectionEngineeringCorrosion	2015	42

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