S. Moisa

Direct evaluation of the sp3 content in diamond-like-carbon films by XPS

Philippe Mérel, M. Tabbal, Mohamed Chaker et al. · Applied Surface Science · 1998 · 677 citations

Materials Science, Materials Engineering, Chemical Engineering +10

Ultraviolet photoenhanced wet etching of GaN in K2S2O8 solution

J. A. Bardwell, J. B. Webb, H. Tang et al. · Journal of Applied Physics · 2001 · 122 citations

Materials Science, Electrical Contact, Applied Chemistry +13

X-ray photoelectron spectroscopy of carbon nitride films deposited by graphite laser ablation in a nitrogen postdischarge

M. Tabbal, Philippe Mérel, S. Moisa et al. · Applied Physics Letters · 1996 · 119 citations

Engineering, Surface Wave, Cubic Boron Nitride +16

Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO

M. Lee, Zheng Lu, Wai Tung Ng et al. · Applied Physics Letters · 2003 · 59 citations · Full text

Engineering, Hfoxny Gate Dielectrics, Thin Film Process Technology +18

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

F. González‐Posada, J. A. Bardwell, S. Moisa et al. · Applied Surface Science · 2007 · 55 citations

Materials Science, Wide-bandgap Semiconductor, Algan/gan-based Hemt Processing +10