Haipeng Tang

Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates

G. Popovici, Wook Kim, A. Botchkarev et al. · Applied Physics Letters · 1997 · 96 citations

Wide-bandgap Semiconductor, Engineering, Zno Substrates +16

AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

Li-Hsien Huang, Shu-Hao Yeh, Ching-Ting Lee et al. · IEEE Electron Device Letters · 2008 · 57 citations

Wide-bandgap Semiconductor, Engineering, Oxidation Resistance +16

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

F. González‐Posada, J. A. Bardwell, S. Moisa et al. · Applied Surface Science · 2007 · 55 citations

Materials Science, Wide-bandgap Semiconductor, Algan/gan-based Hemt Processing +10

Transport properties of proton-irradiated gallium nitride-based two-dimensional electron-gas system

F. Gaudreau, P. Fournier, C. Carlone et al. · IEEE Transactions on Nuclear Science · 2002 · 46 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +13

High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors

Ta‐Ming Kuan, Shoou‐Jinn Chang, Yan-Kuin Su et al. · Japanese Journal of Applied Physics · 2003 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9