G. Popovici

On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy

Wook Kim, A. Botchkarev, A. Salvador et al. · Journal of Applied Physics · 1997 · 167 citations

Materials Engineering, Materials Science, Wide-bandgap Semiconductor +10

Impurity contamination of GaN epitaxial films from the sapphire, SiC and ZnO substrates

G. Popovici, Wook Kim, A. Botchkarev et al. · Applied Physics Letters · 1997 · 96 citations

Wide-bandgap Semiconductor, Engineering, Zno Substrates +16

Diffusion of boron, lithium, oxygen, hydrogen, and nitrogen in type IIa natural diamond

G. Popovici, Rob Wilson, T. Sung et al. · Journal of Applied Physics · 1995 · 62 citations

Mineral Physic, Engineering, Cvd Growth +16

Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells

K. C. Zeng, J. Y. Lin, H. X. Jiang et al. · Applied Physics Letters · 1997 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Optical Materials +13

Prospective n-type impurities and methods of diamond doping

G. Popovici, Mark A. Prelas · Diamond and Related Materials · 1995 · 52 citations

Materials Science, Materials Engineering, Diamond-like Carbon +4